cystech electronics corp. spec. no. : c144s3 issued date : 2016.04.11 revised date : page no. : 1/8 MTA600N02KS3 cystek product specification n-channel mosfet MTA600N02KS3 bv dss 20v i d @v gs =4.5v, t a =25 c 0.55a features ? low on-resistance ? esd protected gate ? high speed switching ? low-voltage drive ? easily designed drive circuits ? easy to use in parallel ? pb-free lead plating and halogen-free package symbol outline MTA600N02KS3 sot-323 ordering information device package shipping MTA600N02KS3-0-t1-g sot-323 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel d g s g gate s source d drain r dson @v gs =4.5v, i d =0.5a 0.213(typ.) r dson @v gs =2.5v, i d =0.5a 0.275(typ.) r dson @v gs =1.8v, i d =0.05a 0.332(typ.) r dson @v gs =1.5v, i d =0.02a 0.447(typ.) r dson @v gs =1.2v, i d =0.01a 0.937(typ.) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products d g s packing spec, t1 : 3000 pcs / tape & reel,7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c144s3 issued date : 2016.04.11 revised date : page no. : 2/8 MTA600N02KS3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v dss 20 gate-source voltage v gss 8 v continuous @ v gs =4.5v, t a =25 c i d 550 drain current pulsed i dp 2.2 *1 ma total power dissipation p d 150 *2 mw thermal resistance, junction to ambient r ja 833 *2 c/w operating junction temperature range tj -55~+150 storage temperature range tstg -55~+150 c note : *1. pulse width 300 s, duty cycle 5% *2. when the device is mounted on a minimum pad size electrical characteristics (ta=25 c) symbol min. typ. max. unit test conditions static bv dss* 20 - - v gs =0v, i d =10 a v gs(th) 0.4 - 1.0 v v ds =v gs , i d =250 a i gss - - 10 v gs =8v, v ds =0v i dss - - 1 a v ds =20v, v gs =0v - 0.213 0.55 v gs =4.5v, i d =500ma - 0.275 0.9 v gs =2.5v, i d =500ma - 0.332 4.2 v gs =1.8v, i d =50ma - 0.447 5.5 v gs =1.5v, i d =20ma r ds(on)* - 0.937 6.5 v gs =1.2v, i d =10ma g fs 400 847 - ms v ds =10v, i d =300ma dynamic c iss - 42 - c oss - 19 - c rss - 13 - pf v ds =10v, v gs =0v, f=1mhz t d(on) - 6 - t r - 17.8 - t d(off) - 32.2 - t f - 20.2 - ns v ds =10v, i d =500ma, v gs =4.5v, r g =6 qg - 1.2 - qgs - 0.43 - qgd - 0.3 - nc v ds =10v, i d =1a, v gs =4.5v source-drain diode *v sd - 0.85 1.2 v v gs =0v, i s =500ma *trr - 4.6 - ns *qrr - 0.57 - nc i f =1a, di f /dt=100a/ s *pulse test : pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c144s3 issued date : 2016.04.11 revised date : page no. : 3/8 MTA600N02KS3 cystek product specification typical characteristics typical output characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 00.511.522.53 v ds , drain-source voltage(v) i d , drain current(a) 5v, 4v,3v v gs =1.5v 2v 2.5v static drain-source on-resistance vs ambient temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 t a , ambient temperature(c) r ds(on) , normalized static drain-source on-state resistance i d =0.5a, v gs =4.5v r dson @tj=25c : 213m typ. static drain-source on-state resistance vs drain current 100 1000 1 10 100 1000 10000 i d , drain current(ma) r ds(on) , static drain-source on-state resistance(m) v gs =1.5v v gs =4.5v v gs =1.8v v gs =2.5v forward drain current vs source-drain voltage 1 10 100 1000 10000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source drain voltage(v) i f , forward drain current(ma) v gs =0v tj=150c tj=25c static drain-source on-state resistance vs gate-source voltage 0 100 200 300 400 500 600 700 800 900 1000 012345678 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =0.5a t a =25c capacitance vs reverse voltage 1 10 100 0 2 4 6 8 10 12 14 16 18 20 v ds , drain-to-source voltage(v) capacitance-(pf) ciss coss crss f=1mhz
cystech electronics corp. spec. no. : c144s3 issued date : 2016.04.11 revised date : page no. : 4/8 MTA600N02KS3 cystek product specification typical characteristics(cont.) maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) r ds( on) limited ta=25c, r ja =833c/w v gs =4.5v, tj=150c single pulse dc 100ms 10ms 1ms 100 s 1s gate threshold voltage vs ambient temperature 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 junction temperature-tj(c) v gs(th) , normalized gate sourcethreshold voltage i d =250 a i d =1ma gate charge characteristics 0 1 2 3 4 5 6 7 8 00.511.52 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =10v i d =1a maximum drain current vs junction temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =833c/w brekdown voltage vs ambient temperature 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v forward transfer admittance vs drain current 0.01 0.1 1 1 10 100 1000 drain current---id(ma) g fs , forward transfer admittance---(s) v ds =10v
cystech electronics corp. spec. no. : c144s3 issued date : 2016.04.11 revised date : page no. : 5/8 MTA600N02KS3 cystek product specification typical characteristics(cont.) drain current vs gate-source voltage 0 0.5 1 1.5 2 2.5 3 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v t a =25c single pulse power rating, junction to ambient 0 1 2 3 4 5 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =833c/w transient thermal response curves 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =833 c/w
cystech electronics corp. spec. no. : c144s3 issued date : 2016.04.11 revised date : page no. : 6/8 MTA600N02KS3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c144s3 issued date : 2016.04.11 revised date : page no. : 7/8 MTA600N02KS3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c144s3 issued date : 2016.04.11 revised date : page no. : 8/8 MTA600N02KS3 cystek product specification sot-323 dimension millimeters marking: te date code as xx device code style: pin 1.gate 2.source 3.drain 3-lead sot-323 plastic surface mounted package cystek package code: s3 inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.200 0.400 0.008 0.016 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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